may.2011.version1.2 magnachipsemiconductorltd . 1 MDU1517Csinglenchanneltrenchmosfet30v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 30 v gatesourcevoltage v gss 20 v continuousdraincurrent (1) t c =25 o c i d 100.0 a t c =70 o c 96.0 t a =25 o c 32.9 (3) t a =70 o c 26.2 (3) pulseddraincurrent i dm 100 a powerdissipation t c =25 o c p d 73.5 w t c =70 o c 47.0 t a =25 o c 5.5 (3) t a =70 o c 3.5 (3) singlepulseavalancheenergy (2) e as 187 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 22.7 o c/w thermalresistance,junctiontocase r jc 1.7 MDU1517 singlenchanneltrenchmosfet30v,100.0a, 2.9m features v ds =30v i d =100.0a@v gs =10v r ds(on)(max) <2.9m @v gs =10v <4.4m @v gs =4.5v 100%uiltested 100%rgtested generaldescription the MDU1517 uses advanced magnachip s mosfet technology, which provides high performance in ons tate resistance, fast switching performance and excellen t quality. MDU1517 is suitable device for dc to dc converterandgeneralpurposeapplications. d g s s s s g g s s s d d d d d d d d powerdfn56
may.2011.version1.2 magnachipsemiconductorltd . 2 MDU1517Csinglenchanneltrenchmosfet30v orderinginformation partnumber temp.range package packing quantity ro hsstatus MDU1517rh 55~150 o c powerdfn56 tape&reel 3000units halogenfree electricalcharacteristics(t j =25 o c) characteristics symbol testcondition min typ max u nit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 30 v gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 1.3 1.9 2.7 draincutoffcurrent i dss v ds =30v,v gs =0v 1 a t j =55 o c 5 gateleakagecurrent i gss v gs =20v,v ds =0v 0.1 drainsourceonresistance r ds(on) v gs =10v,i d =26a 2.5 2.9 m t j =125 o c 3.6 4.2 v gs =4.5v,i d =21a 3.7 4.4 forwardtransconductance g fs v ds =5v,i d =10a 46 s dynamiccharacteristics totalgatecharge q g(10v) v ds =15.0v,i d =26a, v gs =10v 31.1 41.5 51.9 nc totalgatecharge q g(4.5v) 14.9 19.8 24.8 gatesourcecharge q gs 8.1 gatedraincharge q gd 7.9 inputcapacitance c iss v ds =15.0v,v gs =0v, f=1.0mhz 1891 2521 3151 pf reversetransfercapacitance c rss 186 248 310 outputcapacitance c oss 398 531 664 turnondelaytime t d(on) v gs =10v,v ds =15.0v, i d =26a,r g =3.0 12.6 ns risetime t r 12.1 turnoffdelaytime t d(off) 42.6 falltime t f 11.2 gateresistance rg f=1mhz 1.0 2.0 drainsourcebodydiodecharacteristics sourcedraindiodeforwardvoltage v sd i s =26a,v gs =0v 0.8 1.1 v bodydiodereverserecoverytime t rr i f =26a,dl/dt=100a/s 29.9 44.9 ns bodydiodereverserecoverycharge q rr 21.4 32.1 nc note: 1.surfacemountedfr4boardbyjedec(jesd517) 2.e as istestedatstartingtj=25 ,l=0.1mh,i as =.34.0a,v dd =27v,v gs =10v. 3.t<10sec.
may.2011.version1.2 magnachipsemiconductorltd . 3 MDU1517Csinglenchanneltrenchmosfet30v fig.5transfercharacteristics fig.1onregioncharacteristics fig.2 on resistancevariationwith draincurrentandgatevoltage fig.3on resistancevariationwith temperature fig.4on resistancevariationwith gatetosourcevoltage fig.6 body diode forward voltage variation with source current and temperature 5 10 15 20 25 30 35 40 45 50 55 60 0 2 4 6 8 v gs =10v v gs =4.5v drainsourceonresistance[m ] i d ,draincurrent[a] 0 1 2 3 4 5 0 3 6 9 12 15 18 v gs ,gatesourcevoltage[v] t a =25 notes: v ds =5v i d ,draincurrent[a] 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 notes: i d =26.0a t a =25 r ds(on) [m ], drainsourceonresistance v gs ,gatetosourcevolatge[v] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 100 4.5v 3.5v v gs =10v 5.0v 4.0v 3.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 25 i s [a] v sd [v] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 notes: 1.v gs =10v 2.i d =20.0a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c]
may.2011.version1.2 magnachipsemiconductorltd . 4 MDU1517Csinglenchanneltrenchmosfet30v 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 3 10 2 10 1 10 0 10 1 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t),thermalresponse t 1 ,rectangularpulseduration[sec] fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig. 10 maximum drain current v s. casetemperature fig.11 transient thermal response curve 0 5 10 15 20 25 30 0 500 1000 1500 2000 2500 3000 3500 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 4 8 12 16 20 24 28 32 36 40 44 0 2 4 6 8 10 v ds =15v note:i d =26a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 10 2 10 1 10 0 10 1 10 2 10 3 1s 10s 100ms dc 10ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 20 40 60 80 100 120 i d ,draincurrent[a] t a ,casetemperature[ ]
may.2011.version1.2 magnachipsemiconductorltd . 5 MDU1517Csinglenchanneltrenchmosfet30v packagedimension pdfn56(5x6mm) dimensionsareinmillimeters,unlessotherwisespe cified dimension millimeters min max a 0.90 1.10 b 0.33 0.51 c 0.20 0.34 d1 4.50 5.10 d2 4.22 e 5.90 6.30 e1 5.50 6.10 e2 4.30 e 1.27bsc h 0.41 0.71 k 0.20 l 0.51 0.71 0 12
may.2011.version1.2 magnachipsemiconductorltd . 6 MDU1517Csinglenchanneltrenchmosfet30v disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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